| Manufacturer | Infineon |
|---|---|
| Mfr. Part Number | 1EDI3038ASXUMA1 |
| Electland Part Code | 178118 |
| Electland Part Number | NYE_1EDI3038ASXUMA1 |
| Category | Isolators - Gate Drivers |
| Description | 15A Gate Driver Magnetic Coupling 8000Vpk 1 Channel PG-DSO-20-91 |
| Datasheet | Download |
| Category | Isolators Isolators - Gate Drivers |
|---|---|
| Technology | Magnetic Coupling |
| Number of Channels | 1 |
| Voltage - Isolation | 8000Vpk |
| Common Mode Transient Immunity (Min) | 150kV/µs |
| Propagation Delay tpLH / tpHL (Max) | 90ns, 90ns |
| Pulse Width Distortion (Max) | 20ns |
| Rise / Fall Time (Typ) | 35ns, 45ns (Max) |
| Current - Output High, Low | 15A, 15A |
| Current - Peak Output | 15A |
| Voltage - Output Supply | 3V ~ 5.5V, 13.5V ~ 20V |
| grade | Automotive |
| Qualification | AEC-Q100 |
| Operating Temperature | -40℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | 20-BFSOP (0.295", 7.50mm Width) |
| Supplier Device Package | PG-DSO-20-91 |
| Approval Agency | UL, VDE |
| Voltage - Supply | 3V~5.5V;13.5V~20V |
| Features | Dead-time control;Saturation fault detection;Miller clamp protection |
| Quiescent Current | 5mA |
| Current - Output Low(IOL) | 15A |
| Current - Output High(IOH) | 15A |
| CMTI(kV/us) | 150kV/us |
| Isolation Voltage(Vrms) | 5700V |
| Input Logic Level - High | 2V~5.5V |
| Input Logic Level - Low | 0V~0.8V |
| Propagation Delay(tpd) | 60ns;60ns |
| Rise Time | 55ns |
| Fall Time | 45ns |
| Load Type | SiC |
| Packaging | PG-DSO-20 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 3 (168 Hours) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8542.39.0090 |
| Weight | 1.0915g |
1EDI3038AS is a high-voltage galvanically isolated SiC-MOSFET gate driver designed for high-voltage automotive applications. Based on coreless transformer technology, the device provides 8 kV galvanic isolation between the low-voltage domain and the high-voltage domain. The IC supports SiC-MOSFETs rated up to 1200 V. The device features a robust output stage with peak currents up to 15 A, suitable for high-power switching. The split output stage allows independent gate resistors to set different slew rates for turn-on and turn-off transitions. The low-voltage domain supports 5 V and 3.3 V logic levels. On the high-voltage domain side, it can directly drive the gate of a SiC-MOSFET. A short propagation delay of only 60 ns and a minimum pulse width of 150 ns support high switching frequencies while minimizing PWM signal distortion. Desaturation protection combined with a configurable external soft turn-off function prevents SiC-MOSFET damage during short-circuit events. An integrated active Miller clamp stage with up to 10 A capability allows the SiC-MOSFET to operate with a unipolar power supply. The device features a DATA interface that provides detailed fault diagnostics via the PWM signal. Numerous integrated safety-related functions simplify system design compliant with ASIL D. A safety input on the primary side controls the system transition to a safe state. In addition, the device provides a secondary-side active short-circuit pin to trigger a safe state from the secondary side.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $2.37 | 658,040 تومان |
| 10+ | $2.04 | 566,410 تومان |
| 30+ | $1.84 | 510,880 تومان |
| 100+ | $1.67 | 463,680 تومان |
| 500+ | $1.36 | 377,610 تومان |
| 1000+ | $1.32 | 366,500 تومان |