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TI UCC21710DWR

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TI UCC21710DWR

Manufacturer TI
Mfr. Part Number UCC21710DWR
Electland Part Code 178043
Electland Part Number NYE_UCC21710DWR
Category Isolators - Gate Drivers
Description 10A Gate Driver Capacitive Coupling 5700Vrms 1 Channel 16-SOIC
Datasheet Download

Product Attributes

Category Isolators Isolators - Gate Drivers
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 5700Vrms
Common Mode Transient Immunity (Min) 150V/ns
Propagation Delay tpLH / tpHL (Max) 130ns, 130ns
Pulse Width Distortion (Max) 30ns
Rise / Fall Time (Typ) 33ns, 27ns
Current - Output High, Low 10A, 10A
Current - Peak Output 10A
Voltage - Output Supply 13V ~ 33V
Operating Temperature -40℃~+125℃
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Approval Agency UL, VDE
Voltage - Supply 3V~5.5V;13V~33V
Features Saturation fault detection;Miller clamp protection
Quiescent Current 4mA
Current - Output Low(IOL) 10A
Current - Output High(IOH) 10A
CMTI(kV/us) 150kV/us
Isolation Voltage(Vrms) 5700V
Driven Configuration Low Side;High Side
Propagation Delay(tpd) 130ns;130ns
Rise Time 33ns
Fall Time 27ns
Load Type IGBT;MOSFET
Packaging SOIC-16-300mil
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 2 (1 Year)
ExportControlClassNumber EAR99
HtsusCode 8542.39.0070
Weight 0.304g

Introduction

The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current. The input side is isolated from the output side with SiO₂ capacitive isolation technology, supporting up to 1.5-KV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kVₚₖ surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI). The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers' versatility and simplifying the system design effort, size and cost.

Features

  • 5.7-kVᵣₘₛ single channel isolated gate driver
  • Drives SiC MOSFETs and IGBTs up to 2121Vₚₖ
  • 33-V maximum output drive voltage (VDD-VEE)
  • ±10-A drive strength and split output
  • 150-V/ns minimum CMTI
  • 4-A internal active Miller clamp
  • 400-mA soft turn-off under fault condition
  • Isolated analog sensor with PWM output for temperature sensing with NTC, PTC or thermal diode and high voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Rejects <40-ns noise transient and pulses on input pins
  • 12-V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
  • 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance >8 mm
  • Operating junction temperature -40°C to 150°C

Applications

  • Industrial motor drives
  • Server, telecom, and industrial power supplies
  • Uninterruptible power supplies (UPS)
  • Solar inverters
  • Renewable energy storage converters

In-Stock Suppliers

NoyanElectronic
15 in stock
Supplier Part Number: NYE_UCC21710DWR

1 1
QTY USD TOMAN
1+$3.57991,230 تومان
10+$3.09857,950 تومان
30+$2.79774,660 تومان
100+$2.55708,020 تومان

Qty in reel: 2000pcs/reel