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TI UCC21750DWR

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TI UCC21750DWR

Manufacturer TI
Mfr. Part Number UCC21750DWR
Electland Part Code 177696
Electland Part Number NYE_UCC21750DWR
Category Isolators - Gate Drivers
Description 10A Gate Driver Capacitive Coupling 5700Vrms 1 Channel 16-SOIC
Datasheet Download

Product Attributes

Category Isolators Isolators - Gate Drivers
Technology Capacitive Coupling
Number of Channels 1
Voltage - Isolation 5700Vrms
Common Mode Transient Immunity (Min) 150V/ns
Propagation Delay tpLH / tpHL (Max) 130ns, 130ns
Pulse Width Distortion (Max) 30ns
Rise / Fall Time (Typ) 33ns, 27ns
Current - Output High, Low 10A, 10A
Current - Peak Output 10A
Voltage - Output Supply 13V ~ 33V
Operating Temperature -40℃~+150℃
Mounting Type Surface Mount
Package / Case 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package 16-SOIC
Approval Agency UL, VDE
Voltage - Supply 3V~5.5V;13V~33V
Features Saturation fault detection;Miller clamp protection
Quiescent Current 2mA
Current - Output Low(IOL) 10A
Current - Output High(IOH) 10A
CMTI(kV/us) 150kV/us
Isolation Voltage(Vrms) 5700V
Input Logic Level - High 2.1V~5.5V
Input Logic Level - Low 0V~1.65V
Driven Configuration Low Side;High Side
Propagation Delay(tpd) 90ns;90ns
Rise Time 33ns
Fall Time 27ns
Load Type IGBT、SiC
Packaging SOIC-16-300mil
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 2 (1 Year)
ExportControlClassNumber EAR99
HtsusCode 8542.39.0090
Weight 0.248g

Introduction

UCC21750 is a galvanically isolated single-channel gate driver designed for SiC MOSFETs and IGBTs operating at DC voltages up to 2121V, featuring advanced protection, excellent dynamic performance, and robustness. The UCC21750 offers peak source and sink currents of up to ±10A. The input side is isolated from the output side via SiO₂ capacitive isolation technology, supporting working voltages up to 1.5kVRMS, surge immunity of 12.8kVₚₖ, an isolation barrier lifetime of over 40 years, low device-to-device offset, and CMTI greater than 150V/ns. The UCC21750 includes advanced protection features such as fast overcurrent and short-circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input/output-side supply UVLO (for optimized SiC and IGBT switching behavior and robustness). An isolated analog-to-PWM sensor enables easier temperature or voltage sensing, further enhancing driver versatility while simplifying system design effort, size, and cost.

Features

  • 5.7kV RMS single-channel isolated gate driver for SiC MOSFET and IGBT up to 2121Vₚₖ
  • 33V maximum output drive voltage (VDD – VEE)
  • ±10A drive strength with split outputs
  • 150V/ns minimum CMTI
  • DESAT protection with 200ns fast response time
  • 4A internal active Miller clamp
  • 400mA soft turn-off during fault
  • Isolated analog sensor with PWM output
  • Temperature sensing using NTC, PTC, or thermistor diode
  • High-voltage DC link or phase voltage overcurrent alarm FLT and reset via RST/EN
  • Fast enable and disable response for RST/EN
  • <40ns noise transient and pulse rejection on input pins
  • 12V VDD UVLO on RDY (with power-good indication)
  • Input/output with up to 5V overshoot/undershoot transient voltage immunity
  • 130ns (max) propagation delay and 30ns (max) pulse/device-to-device skew
  • SOIC-16 DW package with creepage and clearance > 8mm
  • Operating junction temperature range: -40°C to +150°C
  • Safety-related certifications:
  • Reinforced insulation per DIN EN IEC 60747-17 (VDE 0884-17)
  • UL 1577 component recognition program

Applications

  • Industrial motor drives
  • Server, telecom, and industrial power supplies
  • Uninterruptible power supplies (UPS)
  • Photovoltaic inverters

In-Stock Suppliers

NoyanElectronic
450 in stock
Supplier Part Number: NYE_UCC21750DWR

1 1
QTY USD TOMAN
1+$1.49413,700 تومان
10+$1.31363,730 تومان
30+$1.22338,740 تومان
100+$1.1305,420 تومان
500+$1.05291,540 تومان
1000+$1.04288,760 تومان

Qty in reel: 2000pcs/reel