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TI AFE10004RGET

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TI AFE10004RGET

Manufacturer TI
Mfr. Part Number AFE10004RGET
Electland Part Code 172684
Electland Part Number NYE_AFE10004RGET
Category Specialized ICs
Description Power-Amplifier Precision Analog Front End 24-VQFN (4x4)
Datasheet Download

Product Attributes

Category Integrated Circuits (ICs) Specialized ICs
type Power-Amplifier Precision Analog Front End
Mounting Type Surface Mount
Package / Case 24-VFQFN Exposed Pad
Supplier Device Package 24-VQFN (4x4)
Operating Temperature -40℃~+150℃
Voltage - Supply 1.7V~3.6V
interface SPI;I2C
Features Built-in temperature sensor;Built-in reference source
Number of Channels 4
Resolution (Bits) -;-
Packaging VQFN-24(4x4)
Tariff Active False
ReachStatus REACH Unknown
RohsStatus Not Applicable
MoistureSensitivityLevel 3 (168 Hours)
ExportControlClassNumber EAR99
HtsusCode 8542.39.0070
Weight 0.07g

Introduction

The AFE10004 is a highly integrated, autonomous, power-amplifier (PA) precision analog front end (AFE) that includes four temperature compensation digital-to-analog converters (DACs), integrated EEPROM, and gate bias switches. The four DACs are programmed by four, independent, user-defined, temperature-to-voltage transfer functions stored in the internal EEPROM, allowing any temperature effects to be corrected without additional external circuitry. After start up, the device operates without intervention from a system controller to provide a complete system for setting and compensating bias voltages in control applications. The AFE10004 has four gate bias outputs that are switched on and off through dedicated control pins. The gate bias switches are designed for fast response. In combination with the device PA_ON pin, this fast response enables correct power sequencing and protection of depletion-mode transistors, such as GaAs and GaN. The function integration and wide operating temperature range make the AFE10004 an excellent choice as an all-in-one, autonomous bias control circuit for the power amplifiers found in RF systems. The flexible DAC output ranges and built-in sequencing features let the device be used as a biasing controller for a large variety of transistor technologies, such as LDMOS, GaAs, and GaN.

Features

  • Local and remote diode temperature sensor
  • ±2.5°C accuracy, maximum
  • 0.0625°C resolution
  • Internal EEPROM for autonomous operation
  • Four independent transfer functions storage
  • Device configuration storage
  • Open space for user storage
  • Four analog outputs
  • Four monotonic DACs: 1.22-mV resolution
  • Automatically configured output ranges:
    • Positive output voltage: 5.5 V, maximum
    • Negative output voltage: -10 V, minimum
  • High current drive capability: Source up to 100 mA, Sink up to 20 mA
  • High capacitive load tolerant: up to 15 μF
  • Gate bias on and off control switches
  • Two programmable off voltages
  • Two auxiliary DACs: 1.22-mV resolution
  • Fast switching time: 50 ns, typical
  • Low resistance: 3 Ω, maximum
  • Built-in sequencing control
  • Internal 2.5-V reference
  • SPI and I²C interfaces: 1.7-V to 3.6-V operation
  • SPI: 4-wire Interface
  • I²C: Eight selectable slave addresses
  • Specified temperature range: -40°C to +125°C
  • Operating temperature range -40°C to +150°C

Applications

  • Radar
  • Communications payload
  • Active antenna system mMIMO (AAS)
  • Outdoor backhaul unit

In-Stock Suppliers

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Supplier Part Number: NYE_AFE10004RGET

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QTY USD TOMAN
1+$65.7118,244,660 تومان
250+$25.437,060,750 تومان
500+$24.536,810,860 تومان
1000+$24.096,688,690 تومان

Qty in reel: 250pcs/reel