| Manufacturer | Advanced Linear Devices |
|---|---|
| Mfr. Part Number | ALD910022SALI |
| Electland Part Code | 147539 |
| Electland Part Number | NYE_ALD910022SALI |
| Category | Special Purpose Transistors |
| Description | 500mW SOIC-8 Special Purpose Transistors RoHS |
| Datasheet | Download |
| Category | Discrete Semiconductors Special Purpose Transistors |
|---|---|
| Operating Temperature | -40℃~+85℃ |
| Pd - Power Dissipation | 500mW |
| Number | 2 N-Channel |
| Packaging | SOIC-8 |
| Weight | 0.115g |
ALD810022/ALD910022 are members of the ALD8100xx (quad-channel) and ALD9100xx (dual-channel) supercapacitor Auto-Balance MOSFET (SAB™ MOSFET) series. SAB MOSFETs are fabricated using production-proven EPAD® technology, designed to address voltage and leakage current balancing issues in series-connected supercapacitors. Supercapacitors, also known as ultracapacitors or supercaps, balance leakage current by connecting one or more devices across each supercapacitor bank to prevent overvoltage.
The ALD810022 provides each of its four SAB MOSFET devices with a unique, precisely defined set of operating voltage and current characteristics. It can be used to balance up to four series-connected supercapacitors. The ALD910022 provides each of its two SAB MOSFET devices with its own unique, precise operating electrical characteristics, suitable for up to two series-connected supercapacitors.
Each SAB MOSFET has a precise gate threshold voltage in Vt mode. When the gate-drain-source terminals are connected together (VGS = VDS), this voltage is 2.20V at a drain-source current of IDS(ON) = 1μA. In this mode, input voltage VIN = VGS = VDS. Different VIN values produce output current IOUT = IDS(ON) characteristics, forming an effective variable resistance whose value varies exponentially with VIN. When this VIN is connected across each series supercapacitor, each supercapacitor can be balanced within its voltage and current limits.
When VIN = 2.20V is applied to the ALD810022/ALD910022, IOUT is 1μA. When VIN increases by 100mV to 2.30V, IOUT increases approximately 10-fold. For the ALD910022, when VIN further increases to 2.42V (2.44V for the ALD810022), IOUT increases 100-fold to 100μA. Conversely, when VIN decreases by 100mV to 2.10V, IOUT drops to one-tenth of its previous value, i.e., 0.1μA. A further 100mV decrease in input voltage reduces IOUT to 0.01μA. Therefore, when the ALD810022/ALD910022 SAB MOSFET is connected across a supercapacitor charged to below 2.00V, it consumes essentially no power.
The voltage-dependent characteristics of the ALD810022/ALD910022 on-resistance are highly effective in controlling overvoltage rise when connected across supercapacitors. In a series supercapacitor stack, when the voltage across one supercapacitor rises, the voltages across the other supercapacitors decrease, with the supercapacitor having the highest leakage current exhibiting the lowest voltage. The SAB MOSFETs connected across these supercapacitors will present complementary inverse current levels, generating virtually no additional leakage current beyond that caused by the supercapacitors themselves.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $4.08 | 1,132,830 تومان |
| 200+ | $1.63 | 452,580 تومان |
| 500+ | $1.57 | 435,920 تومان |
| 1000+ | $1.55 | 430,360 تومان |