Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 406 pF @ 25 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.8Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 80W (Tc) |
| Packaging | Tape & Reel (TR) |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
This device is an 800V, 3A N-channel MOSFET utilizing planar technology, available in TO-251AA, TO-252AA, TO-220AB, and ITO-220AB-F package options.
Features
- RDS(ON) < 4.8Ω at VGS=10V, ID=1.5A
- High switching speed
- Improved dv/dt capability
- Low gate charge
- Low reverse transfer capacitance
- RoHS 2011/65/EU compliant, lead-free
- IEC61249 compliant, green molding compound (halogen-free)
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_PJD3NA80_L2_00001
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.404 | 112,170 تومان |
| 200+ | $0.1641 | 45,560 تومان |
| 500+ | $0.159 | 44,150 تومان |
| 1000+ | $0.1557 | 43,230 تومان |
Qty in reel: 3000pcs/reel
