Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1278 pF @ 25 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | DFN5x6 (PR-PAK) |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19.7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 2W (Ta), 72.3W (Tc) |
| Packaging | Tape & Reel (TR) |
| Tariff Active | True |
| ReachStatus | REACH Unknown |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
CMS70N04H8-HF utilizes trench DMOS technology. This advanced technology is specifically designed to minimize on-state resistance RDS(ON), deliver superior switching performance, and withstand high-energy pulses in avalanche and commutation modes. These devices are well-suited for high-efficiency, fast-switching applications. CMS70N04H8-HF complies with RoHS and green product requirements, guarantees 100% EAS (avalanche energy capability), and has passed full-function reliability qualification.
Features
- Advanced DMOS trench technology
- Enhanced dv/dt capability
- RoHS-compliant green devices
- Fast switching
- 100% EAS guaranteed
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_CMS70N04H8-HF
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.3508 | 97,400 تومان |
| 200+ | $0.1425 | 39,570 تومان |
| 500+ | $0.138 | 38,320 تومان |
| 1000+ | $0.1361 | 37,790 تومان |
Qty in reel: 3000pcs/reel
