Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 50 µA @ 10 V |
| Current Drain (Id) - Max | 1 mA |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 1 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 0.7pF @ 10V |
| Power - Max | 100 mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| Pd - Power Dissipation | 100mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 0.7pF |
| Drain Current (Idss) | 130uA |
| Gate-Source Cutoff Voltage (VGS(off)) | 1.4V |
| Reverse Transfer Capacitance (Crss) | 0.3pF |
| Packaging | SOT-883-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.0055g |
Features
- Maximum gate leakage current: -500pA (VGS=-20V, VDS=0V)
- Typical input capacitance: 0.7pF (VDS=10V, VGS=0V, f=1MHz)
- Ultra-compact package for end-product miniaturization
- Halogen-free compliant
Applications
- Impedance conversion
- Infrared sensor applications
