| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 15 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 16 mA @ 5 V |
| Current Drain (Id) - Max | 50 mA |
| Voltage - Cutoff (VGS off) @ Id | 300 mV @ 100 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 5V |
| Power - Max | 200 mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | 3-CP |
| Pd - Power Dissipation | 200mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 10pF |
| Drain Current (Idss) | 16mA |
| Gate-Source Breakdown Voltage (Vgss) | 15V |
| Gate-Source Cutoff Voltage (VGS(off)) | 300mV |
| Reverse Transfer Capacitance (Crss) | 2.9pF |
| Packaging | TO-236-3 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.247g |