| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 20 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 µA |
| Resistance - RDS(On) | 30 Ohms |
| Power - Max | 625 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| RDS(on) | 30Ω |
| Pd - Power Dissipation | 625mW |
| Number | 1 N-channel |
| Drain Current (Idss) | 20mA |
| Gate-Source Breakdown Voltage (Vgss) | 35V |
| Gate-Source Cutoff Voltage (VGS(off)) | 3V |
| Packaging | TO-92-3 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.1555g |
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.0852 | 23,660 تومان |
| 10+ | $0.1512 | 41,980 تومان |
| 30+ | $0.1347 | 37,400 تومان |
| 100+ | $0.1133 | 31,460 تومان |
| 500+ | $0.0326 | 9,050 تومان |
| 1000+ | $0.0321 | 8,910 تومان |