Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 35 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 25 mA @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10pF @ 12V (VGS) |
| Resistance - RDS(On) | 60 Ohms |
| Power - Max | 310 mW |
| Operating Temperature | -65℃~+135℃ |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Long Body, Formed Leads |
| Supplier Device Package | TO-92 (TO-226) |
| RDS(on) | 60Ω |
| Pd - Power Dissipation | 310mW |
| Number | 1 N-channel |
| Gate-Source Breakdown Voltage (Vgss) | 35V |
| Packaging | Bulk |
| Tariff Active | False |
| ReachStatus | REACH Unknown |
| RohsStatus | Unknown |
| Weight | 0.247g |
