Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2 mA @ 10 V |
| Current Drain (Id) - Max | 10 mA |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 1 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Operating Temperature | -55℃~+50℃ |
| Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN |
| Supplier Device Package | SOT-883 (XDFN3) (1x0.6) |
| type | N-Channel |
| Current - Continuous Drain(Id) | 10mA |
| Drain to Source Voltage | 30V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Ciss-Input Capacitance | 4pF |
| Reverse Transfer Capacitance (Crss) | 1.1pF |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.247g |
Introduction
N-channel enhancement-mode FET using trench MOSFET technology, in a compact SOT23 (TO-236AB) SMD plastic package.
Features
- Low IGSS: max -1.0nA (VGS = -20V, VDS = 0V)
- Low Ciss: typ 4pF (VDS = 10V, VGS = 0V, f = 1MHz)
- Ultra-compact package for end-product miniaturization
- Halogen-free compliant
Applications
- Low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications
