Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Operating Temperature | -65℃~+200℃ |
| RDS(on) | 25Ω |
| Pd - Power Dissipation | 360mW |
| Number | 1 N-channel |
| Drain Current (Idss) | 175mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 4V |
| Packaging | Bulk |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | RoHS non-compliant |
| ExportControlClassNumber | IN PROGRESS |
| HtsusCode | 0000.00.0000 |
| Weight | 0.5g |
Features
- Linear derating at 2.06 mW/℃ for ambient temperature TA above 25℃.
- Linear derating at 10.3 mW/℃ for case temperature TC above 25℃.
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In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_MX2N4859UB
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $34.57 | 9,598,510 تومان |
| 200+ | $13.38 | 3,715,010 تومان |
| 500+ | $12.91 | 3,584,520 تومان |
| 1000+ | $12.68 | 3,520,660 تومان |
Qty in reel: 1pcs/reel
