| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 20V |
| Resistance - RDS(On) | 30 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| RDS(on) | 30Ω |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 14pF |
| Drain Current (Idss) | 50mA |
| Gate-Source Cutoff Voltage (VGS(off)) | 4V |
| Packaging | TO-92-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.1555g |
This device is designed for low-level analog switches, sample-and-hold circuits, and chopper-stabilized amplifiers. Manufactured using the 51 process. For characteristics, refer to J111.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.0291 | 8,080 تومان |
| 200+ | $0.0121 | 3,360 تومان |
| 500+ | $0.0117 | 3,250 تومان |
| 1000+ | $0.0115 | 3,190 تومان |