| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Voltage - Breakdown (V(BR)GSS) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 200 µA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id | 2 V @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 10V |
| Power - Max | 225 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 225mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 3pF |
| Drain Current (Idss) | 600uA |
| Gate-Source Breakdown Voltage (Vgss) | 40V |
| Gate-Source Cutoff Voltage (VGS(off)) | 2V |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | Unknown |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.015g |