| Category | Discrete Semiconductors JFETs |
|---|---|
| Operating Temperature | -65℃~+200℃ |
| Package / Case | 0805 (2012 Metric) |
| Supplier Device Package | 0805 |
| Tolerance | ±0.5% |
| Features | Anti-Sulfur, Automotive AEC-Q200 |
| Pd - Power Dissipation | 300mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 6pF |
| Drain Current (Idss) | 8mA |
| Gate-Source Breakdown Voltage (Vgss) | 40V |
| Gate-Source Cutoff Voltage (VGS(off)) | 2V |
| Reverse Transfer Capacitance (Crss) | 2pF |
| Resistance | 53.6 kOhms |
| Temperature Coefficient | ±10ppm/°C |
| Size / Dimension | 0.079" L x 0.049" W (2.00mm x 1.25mm) |
| Height - Seated (Max) | 0.020" (0.50mm) |
| Power (Watts) | 0.125W, 1/8W |
| Composition | Thin Film |
| Number of Terminations | 2 |
| Packaging | TO-72-4 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8533.21.0030 |
| Weight | 0.5g |
Suitable for small-signal applications; suitable for low-noise audio amplifier applications; suitable for RF amplifier applications up to 100 MHz; suitable for chopper and switching applications
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.5238 | 145,440 تومان |
| 200+ | $0.2057 | 57,110 تومان |
| 500+ | $0.1986 | 55,140 تومان |
| 1000+ | $0.1947 | 54,060 تومان |