Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 11pF @ 10V (VGS) |
| Resistance - RDS(On) | 125 Ohms |
| Power - Max | 225 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| RDS(on) | 125Ω |
| Pd - Power Dissipation | 350mW |
| Number | 1 P-Channel |
| Ciss-Input Capacitance | 5.5pF |
| Drain Current (Idss) | 60mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 3V |
| Packaging | TO-92 |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.1555g |
