| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 mA |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Resistance - RDS(On) | 175 Ohms |
| Power - Max | 500 mW |
| Operating Temperature | -65℃~+200℃ |
| grade | Military |
| Qualification | MIL-PRF-19500 |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| RDS(on) | 175Ω |
| Pd - Power Dissipation | 500mW |
| Number | 1 P-Channel |
| Ciss-Input Capacitance | 27pF |
| Drain Current (Idss) | 5mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
| Reverse Transfer Capacitance (Crss) | 7pF |
| Packaging | TO-18 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | RoHS non-compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
This leaded device is available in a high-reliability equivalent version. The device is offered in a surface-mount package, equivalent to the JEDEC-registered 2N5116. RoHS-compliant versions are available (commercial grade only).
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $27.41 | 7,610,500 تومان |
| 200+ | $10.61 | 2,945,910 تومان |
| 500+ | $10.24 | 2,843,180 تومان |
| 1000+ | $10.05 | 2,790,420 تومان |