Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 15 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 25pF @ 15V |
| Resistance - RDS(On) | 100 Ohms |
| Power - Max | 500 mW |
| Operating Temperature | -65℃~+200℃ |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 (TO-206AA) |
| RDS(on) | 100Ω |
| Pd - Power Dissipation | 500mW |
| Ciss-Input Capacitance | 25pF |
| Drain Current (Idss) | 15mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 3V |
| Packaging | TO-18(TO-206AA) |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
Features
- JEDEC registered 2N5114 to 2N5116 series.
- RoHS compliant versions available.
Applications
- Leaded TO-18 package
- Lightweight design
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_2N5115E3
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $18.11 | 5,028,320 تومان |
| 200+ | $7.01 | 1,946,360 تومان |
| 500+ | $6.76 | 1,876,940 تومان |
| 1000+ | $6.64 | 1,843,620 تومان |
Qty in reel: 1pcs/reel
