Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 15V |
| Resistance - RDS(On) | 175 Ohms |
| Power - Max | 500 mW |
| Operating Temperature | -65℃~+200℃ |
| grade | Military |
| Qualification | MIL-PRF-19500 |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Supplier Device Package | UB |
| RDS(on) | 175Ω |
| Pd - Power Dissipation | 500mW |
| Number | 1 P-Channel |
| Ciss-Input Capacitance | 27pF |
| Drain Current (Idss) | 5mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 1V |
| Packaging | SMD-3P |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | Unknown |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
Features
- Symmetric geometry allows these units to operate with source/drain leads interchangeable.
- Derate linearly at 3.0 mW/°C for TA > +25°C.
- Package: Ceramic.
- Leads: Gold over nickel underplate. RoHS-compliant matte/tin finish available in commercial grade only.
- Marking: Part number, date code, manufacturer's identification.
- Tape and reel option: Per EIA-418D. Specific quantities contact factory.
- Weight: <0.04 grams.
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_MV2N5116UB
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $118.7 | 32,957,550 تومان |
| 200+ | $47.37 | 13,152,480 تومان |
| 500+ | $45.79 | 12,713,790 تومان |
| 1000+ | $45 | 12,494,440 تومان |
Qty in reel: 5000pcs/reel
