Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Operating Temperature | -65℃~+150℃ |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| Voltage - Rated | 25 V |
| Technology | JFET |
| Configuration | N-Channel |
| Pd - Power Dissipation | 360mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 8pF |
| Drain Current (Idss) | 20mA |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 8V |
| Current Rating (Amps) | 50mA |
| Packaging | TO-92 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | Unknown |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0075 |
| Weight | 0.5g |
Introduction
The CENTRAL SEMICONDUCTOR 2N3819 is a silicon N- Channel JFET designed for RF amplifier and mixer applications.
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