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LINEAR INTEGRATED SYSTEMS LS26VPS DFN 8L ROHS

Manufacturer	Linear Integrated Systems
Mfr. Part Number	LS26VPS DFN 8L ROHS
Electland Part Code	147048
Electland Part Number	NYE_LS26VPS DFN 8L ROHS
Category	JFETs
Description	JFET P-Channel 40 V 10 mA 350 mW Surface Mount 8-DFN (2x2)
Datasheet	Download

Product Attributes

Category	Discrete Semiconductors JFETs
FET Type	N-Channel
Voltage - Breakdown (V(BR)GSS)	40 V
Drain to Source Voltage (Vdss)	40 V
Current Drain (Id) - Max	10 mA
Voltage - Cutoff (VGS off) @ Id	7.5 V @ 1 µA
Input Capacitance (Ciss) (Max) @ Vds	13pF @ 20V
Resistance - RDS(On)	50 Ohms
Power - Max	350 mW
Operating Temperature	-55℃~+135℃
Mounting Type	Surface Mount
Package / Case	8-VFDFN Exposed Pad
Supplier Device Package	8-DFN (2x2)
RDS(on)	14Ω
Pd - Power Dissipation	350mW
Number	1 N-channel
Ciss-Input Capacitance	13pF
Gate-Source Breakdown Voltage (Vgss)	40V
Reverse Transfer Capacitance (Crss)	3.6pF
Packaging	DFN-8(2x2)
ReachStatus	REACH Unaffected
RohsStatus	ROHS3 Compliant
MoistureSensitivityLevel	1 (Unlimited)
ExportControlClassNumber	EAR99
HtsusCode	8541.21.0095
Weight	0.0205g

Introduction

The LS26VNS is an N-channel junction field-effect transistor (JFET) voltage-controlled resistor whose drain-source resistance is controlled by a DC bias voltage (VGS) applied to the high-impedance gate terminal. At VGS = -1.0V, the minimum RDS is 14 ohms. As VGS approaches the pinch-off voltage of -6.0V, RDS increases rapidly to its maximum value, RDS(max) = 38 ohms. The LS26VNS is particularly suited for applications where the drain-source voltage is a low-level AC signal with no DC component. The key performance characteristic of this device is that RDS can vary from 14 ohms to 38 ohms while VGS remains constant. The LS26VNS is available in TO-92 (3-pin), SOT-23 (3-pin), and small-outline DFN (8-pin) packages.