Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Operating Temperature | -55℃~+150℃ |
| Pd - Power Dissipation | 30mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 0.7pF |
| Drain Current (Idss) | 130uA |
| Gate-Source Breakdown Voltage (Vgss) | 40V |
| Gate-Source Cutoff Voltage (VGS(off)) | 1.4V |
| Reverse Transfer Capacitance (Crss) | 0.3pF |
| ReachStatus | REACH Unaffected |
| RohsStatus | Unknown |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | OBSOLETE |
| HtsusCode | 0000.00.0000 |
| Weight | 0.5g |
Features
- Ultra-compact package for end-product miniaturization: 1.0mm×0.6mm×0.27mm (max 0.3mm)
- Low IGSS: max -500pA (VGSS = -20V, VDS = 0V)
- Low Ciss: typical 0.7pF (VDS = 10V, VGS = 0V, f = 1MHz)
- Halogen-free compliant
Applications
Impedance conversion, infrared sensor applications
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_TF410-TL-HX
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.0709 | 19,690 تومان |
| 200+ | $0.0308 | 8,550 تومان |
| 500+ | $0.0299 | 8,300 تومان |
| 1000+ | $0.0295 | 8,190 تومان |
Qty in reel: 10000pcs/reel
