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Product Attributes

Introduction

The JFE150 is a Burr-Brown discrete JFET manufactured using Texas Instruments' modern high-performance analog bipolar process. The JFE150 delivers performance not achievable with older discrete JFET technologies. It offers the highest possible noise and power efficiency with the flexibility for users to set the quiescent current. It achieves excellent noise performance at currents ranging from 50 μA to 20 mA. At a bias current of 5 mA, the device provides input-referred noise of 0.8 nV/√Hz, with ultra-low noise performance and extremely high input impedance (> 1 TΩ). The JFE150 also integrates diodes connected to separate clamp nodes, providing protection without the need for external diodes that introduce high leakage and nonlinearity. The JFE150 can withstand a high drain-to-source voltage of 40 V, as well as gate-to-source and gate-to-drain voltages as low as −40 V. The operating temperature range is −40°C to +125°C. The device is available in 5-pin SOT-23 and SC70 packages.

Features

• Ultra-low noise:
  • Voltage noise: 0.8 nV/√Hz at 1 kHz, ID = 5 mA; 0.9 nV/√Hz at 1 kHz, ID = 2 mA.
  • Current noise: 1.8 fA/√Hz at 1 kHz.
• Low gate current: 10 pA max.
• Low input capacitance: 24 pF at VDS = 5 V.
• High gate-drain and gate-source breakdown voltage: -40 V.
• High transconductance: 68 mS.
• Packages: compact SC70 and SOT-23.

Applications

• Microphone inputs
• Hydrophones and marine equipment
• DJ controllers, mixers, and other DJ equipment
• Professional audio mixers or control interfaces
• Guitar amplifiers and other instrument amplifiers
• Condition monitoring sensors