Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 60 µA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id | 1.2 V @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 1.8pF @ 10V |
| Resistance - RDS(On) | 12.5 kOhms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 1.8pF |
| Drain Current (Idss) | 90uA |
| Gate-Source Breakdown Voltage (Vgss) | 60V |
| Packaging | SOT-23 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
Introduction
-50V InterFET 2N4117/A, 2N4118/A, and 2N4119/A JFETs for ultra-high input impedance applications. Gate leakage current is typically 120fA at room temperature. Proprietary InterFET process offers extremely high radiation hardness. These devices are suitable for femtoampere-level diode applications.
Features
- InterFET N0001H geometry
- Low gate leakage current: 120fA typical at 20V
- Low input capacitance CISS: 1.8pF typical
- Typical gate-source breakdown voltage BVGSS: -60V
- High radiation hardness
- RoHS, REACH, CMR compliant
- Custom test and binning options available
- SMT, TH, and die package options available
- Corner-case SPICE modeling: InterFET SPICE
Applications
- Buffer
- Signal mixer
- Femtoampere-level diode
- Imaging system
- Monitor
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_SMP4117
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.99 | 552,530 تومان |
| 200+ | $0.7975 | 221,430 تومان |
| 500+ | $0.7709 | 214,040 تومان |
| 1000+ | $0.7582 | 210,520 تومان |
Qty in reel: 20pcs/reel
