Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 12 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 4 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3.5pF @ 15V |
| Resistance - RDS(On) | 150 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+125℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 360mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 5pF |
| Drain Current (Idss) | 20mA |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 2V |
| Packaging | SOT-23 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.017g |
Introduction
This series of -25V N-channel JFET devices is optimized for low-noise, low-leakage VHF/UHF amplifier designs. At room temperature, the typical gate leakage current is below 10pA.
Features
- InterFET N0026S geometry
- Typical noise as low as 4 nV/√Hz
- Typical input capacitance as low as 4.3pF
- Typical leakage current as low as 10pA
- RoHS compliant
- Available in SMT, through-hole, and die package options
Applications
- VHF/UHF amplifier
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In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_SMP5486TR
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.2 | 333,190 تومان |
| 200+ | $0.4773 | 132,520 تومان |
| 500+ | $0.4614 | 128,110 تومان |
| 1000+ | $0.4537 | 125,970 تومان |
Qty in reel: 3000pcs/reel
