| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 0.1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 15V |
| Resistance - RDS(On) | 800 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 300mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 6pF |
| Drain Current (Idss) | 3mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 4V |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
-50V InterFET 2N4220/A and 2N4221/A N-channel JFET devices, designed for sensitive amplifier stages in intermediate frequency designs. At room temperature, gate leakage current is typically less than 10pA. The "A" versions are screened for lower noise.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $2.46 | 683,030 تومان |
| 200+ | $0.9835 | 273,070 تومان |
| 500+ | $0.9509 | 264,020 تومان |
| 1000+ | $0.9342 | 259,380 تومان |