Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 3 V @ 5 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 1.8pF @ 15V |
| Resistance - RDS(On) | 220 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+125℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 375mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 3pF |
| Drain Current (Idss) | 15mA |
| Gate-Source Breakdown Voltage (Vgss) | 20V |
| Gate-Source Cutoff Voltage (VGS(off)) | 6V |
| Packaging | SOT-23 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.017g |
Introduction
IF140 and IF140A N-channel JFETs are optimized for low-noise, high-gain amplifier stages designed for medium-to-high frequency applications. Typical gate leakage current at room temperature is 2pA. The TO-72 package is hermetically sealed.
Features
- InterFET N0014L geometry
- Low noise: 4 nV/√Hz typical
- High gain: 4.5mS typical
- Low input capacitance: 3.0pF maximum
- Drop-in replacement for IF142 devices
- RoHS compliant
- Available in SMT, through-hole, and die package options
Applications
- Low-noise, high-gain amplifier
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_IF140AST3TR
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $3.72 | 1,032,870 تومان |
| 200+ | $1.49 | 413,700 تومان |
| 500+ | $1.44 | 399,820 تومان |
| 1000+ | $1.41 | 391,490 تومان |
Qty in reel: 3000pcs/reel
