| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 80 µA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 1 V @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 15V |
| Resistance - RDS(On) | 1.1 kOhms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+125℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 500mW |
| Number | 1 P-Channel |
| Ciss-Input Capacitance | 25pF |
| Drain Current (Idss) | 1.2mA |
| Gate-Source Breakdown Voltage (Vgss) | 25V |
| Gate-Source Cutoff Voltage (VGS(off)) | 300mV |
| Packaging | SOT-23 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
25V InterFET 2N5020 and 2N5021 are suitable for data switching and low-level chopper designs. At room temperature, gate leakage current is typically less than 1nA.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.94 | 538,650 تومان |
| 200+ | $0.7749 | 215,150 تومان |
| 500+ | $0.7495 | 208,100 تومان |
| 1000+ | $0.7365 | 204,490 تومان |