Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 4.5 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 3.5 V @ 100 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 15V |
| Resistance - RDS(On) | 450 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| RDS(on) | 800Ω |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 3pF |
| Drain Current (Idss) | 9mA |
| Gate-Source Breakdown Voltage (Vgss) | 50V |
| Gate-Source Cutoff Voltage (VGS(off)) | 2.5V |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
Introduction
-50V InterFET 2N4340 and 2N4341 are ultra-low leakage, medium-gain JFETs for sensitive amplifier stages in mid-frequency designs. Gate leakage is less than 1pA at room temperature. The proprietary InterFET process provides exceptional radiation hardness.
Features
- InterFET N0016H geometry
- Low gate leakage: typical < 1pA at 40V
- Low input capacitance CISS: typical 3pF
- Typical noise: 3.5 nV/√Hz
- Typical transconductance: 2mS
- Typical pinch-off voltage: -2.5V
- High radiation hardness
- RoHS, REACH, CMR compliant
- Custom test and binning options available
- SMT, TH, and bare die package options available
- Corner case SPICE modeling: InterFET SPICE
Applications
- Amplifier
- Switch
- Voltage Regulator
- Oscillator
- Signal Mixer
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_SMP4341
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.93 | 535,870 تومان |
| 200+ | $0.7729 | 214,600 تومان |
| 500+ | $0.7469 | 207,380 تومان |
| 1000+ | $0.7342 | 203,850 تومان |
Qty in reel: 20pcs/reel
