| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1 mA @ 20 V |
| Voltage - Cutoff (VGS off) @ Id | 1.1 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 20V |
| Resistance - RDS(On) | 850 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 4pF |
| Drain Current (Idss) | 200uA |
| Gate-Source Breakdown Voltage (Vgss) | 40V |
| Reverse Transfer Capacitance (Crss) | 1pF |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
InterFET IFN201, IFN201A, and IFN202 are designed for cost-sensitive, low-noise applications. These products are ideal for audio microphone and preamplifier designs. At room temperature and 20V, gate leakage current is less than 1pA. They are direct replacements for the SST201, MMBFJ201, J201, and J202 JFETs.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.5202 | 144,440 تومان |
| 200+ | $0.2102 | 58,360 تومان |
| 500+ | $0.2035 | 56,500 تومان |
| 1000+ | $0.2002 | 55,590 تومان |