| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 7 mA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 1.5 V @ 10 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 12pF @ 0V |
| Resistance - RDS(On) | 130 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| RDS(on) | 300Ω |
| Pd - Power Dissipation | 350mW |
| Number | 1 P-Channel |
| Ciss-Input Capacitance | 5.5pF |
| Drain Current (Idss) | 20mA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Gate-Source Cutoff Voltage (VGS(off)) | 800mV;2.25V |
| Reverse Transfer Capacitance (Crss) | 5.5pF |
| Packaging | SOT-23 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
The InterFET J176 and J177 are 30V ultra-low leakage, low-noise P-channel JFETs designed for high-gain switching, commutator, and chopper applications. At room temperature, gate leakage current is typically less than 3pA. The J177's cutoff voltage is below 2.25V, making it ideal for low-level power supplies. InterFET's proprietary process provides exceptional radiation hardness.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $3.15 | 874,610 تومان |
| 200+ | $1.26 | 349,840 تومان |
| 500+ | $1.22 | 338,740 تومان |
| 1000+ | $1.2 | 333,190 تومان |