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INTERFET SMP4117ATR

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INTERFET SMP4117ATR

Manufacturer InterFET
Mfr. Part Number SMP4117ATR
Electland Part Code 146884
Electland Part Number NYE_SMP4117ATR
Category JFETs
Description JFET N-Channel 350 mW Surface Mount SOT-23-3
Datasheet Download

Product Attributes

Category Discrete Semiconductors JFETs
FET Type N-Channel
Drain to Source Voltage (Vdss) 40 V
Current - Drain (Idss) @ Vds (Vgs=0) 60 µA @ 10 V
Voltage - Cutoff (VGS off) @ Id 1.2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds 1.8pF @ 10V
Resistance - RDS(On) 12.5 kOhms
Power - Max 350 mW
Operating Temperature -55℃~+125℃
Mounting Type Surface Mount
Package / Case SOT-23-3
Supplier Device Package SOT-23-3
Pd - Power Dissipation 300mW
Number 1 N-channel
Ciss-Input Capacitance 1.8pF
Drain Current (Idss) 90uA
Gate-Source Breakdown Voltage (Vgss) 40V
Packaging SOT-23-3
Tariff Active False
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
ExportControlClassNumber EAR99
HtsusCode 8541.21.0095
Weight 0.017g

Introduction

-50V InterFET 2N4117/A, 2N4118/A, and 2N4119/A JFETs for ultra-high input impedance applications. Gate leakage current is typically 120fA at room temperature. Proprietary InterFET process offers extremely high radiation hardness. These devices are suitable for femtoampere-level diode applications.

Features

  • InterFET N0001H geometry
  • Low gate leakage current: 120fA typical at 20V
  • Low input capacitance CISS: 1.8pF typical
  • Typical gate-source breakdown voltage BVGSS: -60V
  • High radiation hardness
  • RoHS, REACH, CMR compliant
  • Custom test and binning options available
  • SMT, TH, and die package options available
  • Corner-case SPICE modeling: InterFET SPICE

Applications

  • Buffer
  • Signal mixer
  • Femtoampere-level diode
  • Imaging system
  • Monitor

In-Stock Suppliers

NoyanElectronic
0 in stock
Supplier Part Number: NYE_SMP4117ATR

1 1
QTY USD TOMAN
1+$1.61447,020 تومان
200+$0.6425178,390 تومان
500+$0.6208172,370 تومان
1000+$0.6106169,540 تومان

Qty in reel: 3000pcs/reel