Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 10 mA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id | 1.1 V @ 0.5 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
| Resistance - RDS(On) | 50 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Drain Current (Idss) | 20mA |
| Gate-Source Breakdown Voltage (Vgss) | 20V |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.017g |
Introduction
InterFET's flagship product, a low-noise, low-leakage N-channel JFET. Features high gain and high radiation hardness, suitable for standard applications. The IF1320's pinch-off voltage is less than -1.5V, making it ideal for low-voltage supply applications. InterFET's proprietary JFET process makes it the most radiation-hardened, lowest-leakage JFET on the market. Custom sorting options available.
Features
- InterFET N0132L geometry
- Low noise: 1.0 nV/√Hz typical
- High gain: 22mS typical
- Low gate leakage: 750fA typical at 10V
- Low pinch-off voltage: -1.0V typical
- High radiation hardness
- RoHS, REACH, and CMR compliant
- Custom test and binning options available
- SMT, TH, and die package options available
- Worst-case SPICE modeling: InterFET SPICE
Applications
- Amplifier
- Switch
- Voltage Regulator
- Oscillator
- Signal Mixer
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_IF1320ST3TR
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.41 | 391,490 تومان |
| 200+ | $0.5621 | 156,070 تومان |
| 500+ | $0.5436 | 150,930 تومان |
| 1000+ | $0.5341 | 148,300 تومان |
Qty in reel: 3000pcs/reel
