| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 6 mA @ 5 V |
| Voltage - Cutoff (VGS off) @ Id | 1.3 V @ 10 µA |
| Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Resistance - RDS(On) | 290 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 4pF |
| Drain Current (Idss) | 6mA |
| Gate-Source Breakdown Voltage (Vgss) | 75V |
| Gate-Source Cutoff Voltage (VGS(off)) | 250mV;4.5V |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
InterFET IFN160A, IFN160B, and IFN160C devices are suited for cost-sensitive, low-noise designs. These devices are ideal for audio microphone and preamplifier designs. At room temperature, gate leakage current is typically less than 3pA. Fully compatible with the 2SK160 JFET.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.6962 | 193,300 تومان |
| 200+ | $0.2809 | 77,990 تومان |
| 500+ | $0.2715 | 75,380 تومان |
| 1000+ | $0.2669 | 74,110 تومان |