| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 14 mA @ 10 V |
| Voltage - Cutoff (VGS off) @ Id | 1.2 V @ 1 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
| Resistance - RDS(On) | 42 Ohms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 15pF |
| Drain Current (Idss) | 20mA |
| Gate-Source Breakdown Voltage (Vgss) | 20V |
| Gate-Source Cutoff Voltage (VGS(off)) | 2V |
| Reverse Transfer Capacitance (Crss) | 4pF |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.017g |
IFN152 is a -20V low-noise, high-gain junction field-effect transistor designed as a replacement for the Japanese 2SK152. Its typical gate leakage current at room temperature is only 750fA. The device employs proprietary materials and processes to achieve radiation tolerance and minimal leakage current.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.8 | 499,780 تومان |
| 200+ | $0.7185 | 199,490 تومان |
| 500+ | $0.6942 | 192,750 تومان |
| 1000+ | $0.6821 | 189,390 تومان |