| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 40 µA @ 15 V |
| Voltage - Cutoff (VGS off) @ Id | 700 mV @ 100 nA |
| Input Capacitance (Ciss) (Max) @ Vds | 3pF @ 15V |
| Resistance - RDS(On) | 1.2 kOhms |
| Power - Max | 350 mW |
| Operating Temperature | -55℃~+150℃ |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| RDS(on) | 2.5kΩ |
| Pd - Power Dissipation | 350mW |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 3pF |
| Drain Current (Idss) | 600uA |
| Packaging | SOT-23-3 |
| Tariff Active | False |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
The InterFET 2N4338 and 2N4339 are -50V N-channel JFETs featuring ultra-low leakage and low input capacitance, designed for low-noise precision amplifier stages. At room temperature, gate leakage current is typically less than 750fA. The 2N4338's cutoff voltage of less than -1.0V makes it ideal for low-level power supplies. InterFET's proprietary process provides exceptional radiation hardness.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $2 | 555,310 تومان |
| 200+ | $0.8022 | 222,730 تومان |
| 500+ | $0.7755 | 215,320 تومان |
| 1000+ | $0.7625 | 211,710 تومان |