Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 50 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±25V |
| Power Dissipation (Max) | 30W (Tc) |
| Packaging | Tube |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
These FDmesh™ II power MOSFETs with intrinsic fast-recovery body diode are manufactured using second-generation MDmesh™ technology. These innovative devices feature a new strip layout vertical structure, offering ultra-low on-resistance and excellent switching performance. They are ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters.
Features
- Best-in-class RDS(on) × area product among fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capability
Applications
- Switching applications
محصولات مشابه
In-Stock Suppliers
NoyanElectronic
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Supplier Part Number: NYE_STF18NM60ND
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Unit Price:
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تومان
Total Price:
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تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $1.61 | 447,020 تومان |
| 200+ | $0.6449 | 179,060 تومان |
| 500+ | $0.6235 | 173,120 تومان |
| 1000+ | $0.6129 | 170,170 تومان |
Qty in reel: 1000pcs/reel
