Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 300 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3 Full Pack |
| Supplier Device Package | TO-3PF |
| Technology | MOSFET (Metal Oxide) |
| RDS(on) | 57mΩ |
| Pd - Power Dissipation | 85W |
| Number | 1 N-channel |
| Ciss-Input Capacitance | 3.8nF |
| Drain Current (Idss) | 100uA |
| Gate-Source Breakdown Voltage (Vgss) | 30V |
| Reverse Transfer Capacitance (Crss) | 180pF |
| Output Capacitance(Coss) | 540pF |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 85W (Tc) |
| Packaging | Tube |
| Tariff Active | False |
| ReachStatus | REACH Unknown |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Features
- Low on-resistance
- Low input capacitance
- Guaranteed avalanche energy capability
Applications
- PDP driver
- High-speed switching
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