Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 620 V |
| Input Capacitance (Ciss) (Max) @ Vds | 386 pF @ 50 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 1.25A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 45W (Tc) |
| Packaging | Tape & Reel (TR) |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
These devices are manufactured using SuperMESH3 power MOSFET technology, which was developed by enhancing STMicroelectronics' SuperMESH technology and incorporating a new optimized vertical structure. The resulting products feature extremely low on-resistance, excellent dynamic performance, and high avalanche capability, making them particularly suitable for the most demanding applications.
Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Extremely low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener protection
Applications
- Switching applications
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_STD3LN62K3
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Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.2964 | 82,300 تومان |
| 200+ | $0.121 | 33,600 تومان |
| 500+ | $0.1171 | 32,510 تومان |
| 1000+ | $0.1152 | 31,990 تومان |
Qty in reel: 2500pcs/reel
