Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263 |
| Technology | MOSFET (Metal Oxide) |
| RDS(on) | 45mΩ |
| Pd - Power Dissipation | 95W |
| Ciss-Input Capacitance | 2nF |
| Drain Current (Idss) | 100uA |
| Gate-Source Cutoff Voltage (VGS(off)) | 3V;4.5V |
| Reverse Transfer Capacitance (Crss) | 80pF |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain (Id) @ 25°C | 45A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 95W (Tc) |
| Packaging | Tape & Reel (TR) |
| Tariff Active | True |
| ReachStatus | REACH Unknown |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Features
- Low on-resistance
- Low input capacitance
- Guaranteed avalanche energy capability
Applications
- PDP driver
- High-speed switching
