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ST STP16NK65Z

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ST STP16NK65Z

Manufacturer ST
Mfr. Part Number STP16NK65Z
Electland Part Code 146832
Electland Part Number NYE_STP16NK65Z
Category JFETs
Description N-Channel 650 V 13A (Tc) 190W (Tc) Through Hole TO-220
Datasheet Download

Product Attributes

Category Discrete Semiconductors JFETs
FET Type N-Channel
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2750 pF @ 25 V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Vgs (Max) ±30V
Power Dissipation (Max) 190W (Tc)
Packaging Tube
Tariff Active True
ReachStatus REACH Unaffected
RohsStatus ROHS3 Compliant
MoistureSensitivityLevel 1 (Unlimited)
ExportControlClassNumber EAR99
HtsusCode 8541.29.0055
Weight 0.5g

Introduction

SuperMESH™ series is obtained through extreme optimization of STMicroelectronics' proven strip-based PowerMESH™ layout. In addition to significantly reducing on-resistance, special attention has been paid to ensuring excellent dv/dt capability in the most demanding applications. This series complements STMicroelectronics' complete portfolio of high-voltage MOSFETs, including the revolutionary MDmesh™ products.

Features

  • Typical R<sub>DS(on)</sub> = 0.38Ω
  • Extremely high dv/dt capability
  • 100% avalanche tested
  • Minimized gate charge
  • Ultra-low intrinsic capacitance
  • Excellent process repeatability

Applications

  • High current, high-speed switching
  • Off-line power supplies

In-Stock Suppliers

NoyanElectronic
0 in stock
Supplier Part Number: NYE_STP16NK65Z

1 1
QTY USD TOMAN
1+$0.150641,810 تومان
200+$0.062617,380 تومان
500+$0.060616,830 تومان
1000+$0.059716,580 تومان

Qty in reel: 50pcs/reel