| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2750 pF @ 25 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6.5A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 190W (Tc) |
| Packaging | Tube |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
SuperMESH™ series is obtained through extreme optimization of STMicroelectronics' proven strip-based PowerMESH™ layout. In addition to significantly reducing on-resistance, special attention has been paid to ensuring excellent dv/dt capability in the most demanding applications. This series complements STMicroelectronics' complete portfolio of high-voltage MOSFETs, including the revolutionary MDmesh™ products.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.1506 | 41,810 تومان |
| 200+ | $0.0626 | 17,380 تومان |
| 500+ | $0.0606 | 16,830 تومان |
| 1000+ | $0.0597 | 16,580 تومان |