Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 25 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F |
| Technology | MOSFET (Metal Oxide) |
| RDS(on) | 21mΩ |
| Pd - Power Dissipation | 40W |
| Ciss-Input Capacitance | 2.2nF |
| Drain Current (Idss) | 100uA |
| Gate-Source Breakdown Voltage (Vgss) | 20V |
| Output Capacitance(Coss) | 850pF |
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 40W (Tc) |
| Packaging | Bulk |
| Tariff Active | False |
| ReachStatus | REACH Unknown |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Features
- Maximum Ratings (Ta = 25℃)
- Condition 1: Pulse width Pw defined as 100μs, duty cycle ≤ 1%
- Condition 2: VDD = 50V, L = 50μH, IL = 30A, unclamped, RG = 50Ω
