Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 620 V |
| Input Capacitance (Ciss) (Max) @ Vds | 875 pF @ 50 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package | I2PAK |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Vgs (Max) | ±30V |
| Power Dissipation (Max) | 90W (Tc) |
| Packaging | Tube |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
These SuperMESH3 power MOSFETs are developed on the foundation of SuperMESH™ technology, incorporating a newly optimized vertical structure. These devices feature extremely low on-resistance, excellent dynamic performance, and high avalanche ruggedness, making them suitable for the most demanding applications.
Features
- 100% avalanche tested
- Extremely high dv/dt capability
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Improved diode reverse recovery characteristics
- Zener protection
Applications
- Switching applications
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_STI6N62K3
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.8429 | 234,030 تومان |
| 200+ | $0.3391 | 94,150 تومان |
| 500+ | $0.3282 | 91,130 تومان |
| 1000+ | $0.3225 | 89,540 تومان |
Qty in reel: 50pcs/reel
