Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 10 V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 9-UFBGA, WLBGA |
| Supplier Device Package | U-WLB1515-9 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 4.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 2A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4.5 V |
| Vgs (Max) | -6V |
| Power Dissipation (Max) | 1W (Ta) |
| Packaging | Tape & Reel (TR) |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Introduction
This next-generation MOSFET is designed to minimize on-resistance (RDS(on)) while maintaining superior switching performance, making it ideal for high-efficiency power management applications.
Features
- LD-MOS technology with lowest figure of merit: RDS(on) = 28mΩ, minimizing conduction losses
- Qg = 5.4nC for ultra-fast switching
- VSS(th) = -0.6V (typical) with low turn-on potential
- CSP package with dimensions 1.5mm × 1.5mm
- Height of 0.62mm for low-profile design
- Gate with 3kV HBM ESD protection
- Fully lead-free and fully RoHS compliant
- Halogen- and antimony-free "green" device
- AEC-Q101 qualified for high reliability
Applications
- Battery Management
- Load Switch
- Battery Protection
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_DMP2033UCB9-7
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Unit Price:
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تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.2153 | 59,780 تومان |
| 200+ | $0.0884 | 24,540 تومان |
| 500+ | $0.0858 | 23,820 تومان |
| 1000+ | $0.0846 | 23,490 تومان |
Qty in reel: 3000pcs/reel
