Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2520 pF @ 25 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F |
| Technology | MOSFET (Metal Oxide) |
| RDS(on) | 9.2mΩ |
| Pd - Power Dissipation | 38W |
| Ciss-Input Capacitance | 2.52nF |
| Drain Current (Idss) | 39A |
| Reverse Transfer Capacitance (Crss) | 135pF |
| Output Capacitance(Coss) | 280pF |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 28.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 650µA |
| Gate Charge (Qg) (Max) @ Vgs | 38.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 38W (Tc) |
| Packaging | Tube |
| Tariff Active | True |
| ReachStatus | REACH Unknown |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Features
- Drain-to-source breakdown voltage V(BR)DSS = 60 V (ID = 100 μA)
- Drain current ID = 39 A
- Maximum on-state resistance RDS(ON) = 9.2 mΩ (VGS = 10 V, ID = 28.5 A)
- Gate charge Qg = 16.9 nC (VGS = 4.5 V, VDS = 30 V, ID = 28.5 A)
- Low total gate charge
- High-speed switching
- Low on-state resistance
- 4.5 V gate drive compatible
- 100% UIL tested
- RoHS compliant
Applications
- DC-DC Converter
- Synchronous Rectification
- Power Supply
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_FKI06108
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.5751 | 159,680 تومان |
| 200+ | $0.2323 | 64,500 تومان |
| 500+ | $0.2247 | 62,390 تومان |
| 1000+ | $0.2208 | 61,310 تومان |
Qty in reel: 50pcs/reel
