| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7.8 pF @ 3 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Supplier Device Package | CST3 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 10mA, 4V |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 100mW (Ta) |
| Packaging | Tape & Reel (TR) |
| Tariff Active | False |
| ReachStatus | REACH Unknown |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.21.0095 |
| Weight | 0.5g |
This Toshiba N-channel silicon MOS field-effect transistor is designed for high-speed switching and analog switching applications. It features a small package suitable for high-density mounting, with low on-resistance characteristics: R₀ₙ(max) = 4.0Ω at VGS = 4V, and Rₒₙ(max) = 7.0Ω at VGS = 2.5V.
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.0405 | 11,240 تومان |
| 200+ | $0.0187 | 5,190 تومان |
| 500+ | $0.0182 | 5,050 تومان |
| 1000+ | $0.018 | 5,000 تومان |