Product Attributes
| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Supplier Device Package | TO-220F |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 15.3mOhm @ 19.8A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 350µA |
| Gate Charge (Qg) (Max) @ Vgs | 23.7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 32W (Tc) |
| Packaging | Tube |
| Tariff Active | True |
| ReachStatus | REACH Unknown |
| RohsStatus | RoHS Compliant |
| MoistureSensitivityLevel | 1 (Unlimited) |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
Features
- Drain-source breakdown voltage V(BR)DSS: 60 V (ID = 100 μA)
- Drain current ID: 30 A
- On-resistance RDS(ON): 16.5 mΩ max (VGS = 10 V, ID = 19.8 A)
- Gate charge Qg: 9.1 ~ nC (VGS = 4.5 ~ V, VDS = 30 ~ V, ID = 19.8 ~ A)
- Low total gate charge
- High-speed switching
- Low on-resistance
- 4.5 V gate drive compatible
- 100% UIL tested
- RoHS compliant
Applications
- DC-DC Converter
- Synchronous Rectification
- Power Supply
In-Stock Suppliers
NoyanElectronic
0 in stock
Supplier Part Number: NYE_FKI06190
1 1
Unit Price:
$
تومان
Total Price:
$
تومان
| QTY | USD | TOMAN |
|---|---|---|
| 1+ | $0.477 | 132,440 تومان |
| 200+ | $0.1933 | 53,670 تومان |
| 500+ | $0.1869 | 51,890 تومان |
| 1000+ | $0.1838 | 51,030 تومان |
Qty in reel: 50pcs/reel
