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ST STH140N6F7-2

Manufacturer	ST
Mfr. Part Number	STH140N6F7-2
Electland Part Code	146774
Electland Part Number	NYE_STH140N6F7-2
Category	JFETs
Description	N-Channel 60 V 80A (Tc) 158W (Tc) Surface Mount H2PAK-2
Datasheet	Download

Product Attributes

Category	Discrete Semiconductors JFETs
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Operating Temperature	-55℃~+175℃
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package	H2PAK-2
Technology	MOSFET (Metal Oxide)
RDS(on)	2.5mΩ
Pd - Power Dissipation	110W
Number	1 N-channel
Ciss-Input Capacitance	2.7nF
Drain Current (Idss)	1uA
Gate-Source Breakdown Voltage (Vgss)	20V
Reverse Transfer Capacitance (Crss)	25pF
Output Capacitance(Coss)	650pF
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Power Dissipation (Max)	158W (Tc)
Packaging	Tape & Reel (TR)
Tariff Active	True
ReachStatus	REACH Unaffected
RohsStatus	ROHS3 Compliant
MoistureSensitivityLevel	1 (Unlimited)
ExportControlClassNumber	EAR99
HtsusCode	8541.29.0055
Weight	0.5g

Introduction

This device is designed using STMicroelectronics' proprietary STripFET™ technology seventh-generation design rules, incorporating a new gate structure. The resulting power MOSFET delivers the lowest R<sub>DS(on)</sub> across all package types.