| Category | Discrete Semiconductors JFETs |
|---|---|
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 750 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1422 pF @ 100 V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Technology | SiCFET (Cascode SiCJFET) |
| Gate Charge(Qg) | 37.8nC |
| Current - Continuous Drain (Id) @ 25°C | 81A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 20A, 12V |
| Vgs(th) (Max) @ Id | 6V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 37.8 nC @ 15 V |
| Vgs (Max) | ±20V |
| Power Dissipation (Max) | 385W (Tc) |
| Packaging | TO-247-3 |
| Tariff Active | True |
| ReachStatus | REACH Unaffected |
| RohsStatus | ROHS3 Compliant |
| MoistureSensitivityLevel | Not Applicable |
| ExportControlClassNumber | EAR99 |
| HtsusCode | 8541.29.0055 |
| Weight | 0.5g |
UJ4C075018K3S is a 750 V, 18 mΩ 4th-generation SiC FET. Based on a unique "cascode" circuit configuration, it co-packages a normally-on SiC JFET with a Si MOSFET to form a normally-off SiC FET device. The device features standard gate drive characteristics, enabling true "drop-in replacement" for Si IGBTs, Si MOSFETs, SiC MOSFETs, or Si superjunction devices. Housed in a TO247-3 package, it offers ultra-low gate charge and superior reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive.